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 DS 17 DSA 17
DSI 17 DSAI 17
Rectifier Diode Avalanche Diode
VRRM = 800-1800 V IF(RMS) = 40 A IF(AV)M = 25 A
VRSM V 900 1300 1300 1700 1900
V(BR)minyx VRRM V 1300 1750 1950 V 800 1200 1200 1600 1800
Anode on stud DS 17-08A DS 17-12A DSA 17-12A DSA 17-16A DSA 17-18A
Cathode on stud DSI 17-08A DSI 17-12A DSAI 17-12A DSAI 17-16A DSAI 17-18A
DO-203 AA
C A DS DSA A C DSI DSAI
x Only for Avalanche Diodes A = Anode
10-32UNF C = Cathode
Symbol IF(RMS) IF(AV)M PRSM IFSM
Test Conditions TVJ = TVJM Tcase = 125C; 180 sine DSA(I) types, TVJ = TVJM, tp = 10 ms TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 40 25 7 370 400 300 320 680 660 450 430 -40...+180 180 -40...+180 A A kW A A A A As A2s As A2s C C C Nm lb.in. g
2 2
Features International standard package, JEDEC DO-203 AA (DO-4) Planar glassivated chips
q q
It
2
TVJ = 45C VR = 0 TVJ = TVJM VR = 0
Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies
q q q q
q q q
TVJ TVJM Tstg Md Weight Mounting torque
q
2.2-2.8 19-25 6
Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol IR VF VT0 rT RthJC RthJH dS dA a
Test Conditions TVJ = TVJM; VR = VRRM IF = 55 A; TVJ = 25C
Characteristic Values 4 1.36 0.85 8 1.5 2.1 2.05 2.05 100 mA V V mW K/W K/W mm mm m/s2
For power-loss calculations only TVJ = TVJM DC current DC current Creepage distance on surface Strike distance through air Max. allowable acceleration
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
(c) 2000 IXYS All rights reserved
1-2
DS 17 DSA 17
100 400 1000
DSI 17 DSAI 17
typ.
A 80
lim.
A 300
50Hz, 80% VRRM
800 A2s
VR = 0 V
TVJ = 45C
600 I2t 400
IF 60
TVJ= 180C TVJ= 25C
IFSM
TVJ = 45C
200 40 100 20
TVJ = 180C
200
TVJ = 180C
0 V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VF
0 10-3
100 10-2 10-1 t s 100 1 2 3 4 5 6 7 ms10 89 t
Fig. 1 Forward characteristics
50 W 40 PF 30
Fig. 2 Surge overload current IFSM: crest value, t: duration
RthJA :
2.8 K/W 3.2 K/W 4,8 K/W 6.3 K/W 8.5 K/W Cu 80x80
Fig. 3 I2t versus time (1-10 ms)
40 A 30 IF(AV)M
20
20
DC 180 sin 120 60 30
10
10
0 0 10 20 30 40 A IF(AV)M 0 50 0 50 100
Tamb
0 150 C 200 0 50 100 150 C Tcase
Fig. 4 Power dissipation versus forward current and ambient temperature
Fig. 5 Max. forward current at case temperature 180 sine RthJH for various conduction angles d:
K/W
d
ZthJH 2
RthJH (K/W) 2.10 2.23 2.33 2.53 2.72
DC 180 120 60 30
1
Constants for ZthJH calculation: i 1 2 3 4 Rthi (K/W) 0.1006 0.5311 0.8683 0.600 ti (s) 0.0021 0.0881 2.968 3.20
0 10-3
10-2
10-1
100
101 t
s
102
Fig. 6 Transient thermal impedance junction to heatsink
(c) 2000 IXYS All rights reserved
2-2


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